BUK9MGP-55PTS Datasheet | NXP Semiconductors

.. Dual Trench PLUS logic level FET Rev. 01 - 14 May 2009 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance (HPA) Trench PLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes. 1.2 Features and benefits - Integrated current sensors - Integrated temperature sensors 1.3 Applications - Lamp switching - Motor drive systems - Power distribution - Solenoid drivers 1.4 Quick reference data Table 1. Quick reference Conditions VGS = 5 V; ID = 10 A; Tj = 25 °C; see Figure 23; see Figure 25 Tj = 25 °C; VGS = 5 V; see Figure 27 VGS = 0 V; ID = 250 µA; Tj = 25 °C VGS = 5 V; ID = 5 A; Tj = 25 °C; see Figure 24; see Figure 26 Tj = 25 °C; VGS = 5 V; see Figure 28 VGS = 0 V; ID = 250 µA; Tj = 25 °C Min Typ 8.6 Max 10 Unit mΩ Symbol Parameter Static characteristics, FET1 RDSon drain-source on-state resistance ratio of drain current to sense current ID/Isense 8100 55 - 9900 - A/A V V(BR)DSS drain-source breakdown voltage Static characteristics, FET2 RDSon drain-source on-state resistance ratio of drain current to sense current - 21.3 25 mΩ ID/Isense 5910 55 - 7227 - A/A V V(BR)DSS drain-source breakdown voltage NXP...