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BUK9MJJ-65PLL - Dual TrenchPLUS FET Logic Level FET

General Description

Dual N-channel enhancement mode field-effect power transistor in SO20.

Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes.

Key Features

  • Integrated current sensors.
  • Integrated temperature sensors 1.3.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 02 — 18 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes. 1.2 Features and benefits  Integrated current sensors  Integrated temperature sensors 1.3 Applications  Lamp switching  Motor drive systems  Power distribution  Solenoid drivers 1.4 Quick reference data Table 1.