BUK9MNN-65PKK
BUK9MNN-65PKK is Dual TrenchPLUS FET Logic Level FET manufactured by NXP Semiconductors.
description
Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance (HPA) Trench PLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes.
1.2 Features and benefits
- Integrated current sensors
- Integrated temperature sensors
1.3 Applications
- Lamp switching
- Motor drive systems
- Power distribution
- Solenoid drivers
1.4 Quick reference data
Table 1. Symbol RDSon Quick reference data Parameter drain-source on-state resistance ratio of drain current to sense current drain-source breakdown voltage Conditions VGS = 5 V; ID = 5 A; Tj = 25 °C; see Figure 16; see Figure 17 Tj = 25 °C; VGS = 5 V; see Figure 18 ID = 250 µA; VGS = 0 V; Tj = 25 °C Min Typ Max Unit mΩ
FET1 and FET2 static characteristics 30.6 36
ID/Isense
2242 2491 2740 A/A
V(BR)DSS
- -
..
NXP Semiconductors
Dual Trench PLUS FET Logic Level FET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Pinning information Symbol Description
G1 IS1 D1 A1 C1 G2 IS2 D2 A2 C2 D2 KS2 S2 S2 D2 D1 KS1 S1 S1 D1 gate 1 current sense 1 drain anode 1 cathode 1 gate 2 current sense 2 drain 2 anode 2 cathode 2 drain 2 Kelvin source 2 source 2 source 2 drain 2 drain 1 Kelvin source 1 source 1 source 1 drain 1
1 10 G1 IS1 S1 KS1 C1 G2 IS2 S2 KS2 C2
003aaa745
Simplified outline
20 11
Graphic symbol
D1 A1 D2 A2
FET1
FET2
SOT163-1 (SO20)
3. Ordering information
Table 3. Ordering information Package Name BUK9MNN-65PKK SO20 Description plastic small outline package; 20 leads; body width 7.5 mm Version SOT163-1 Type number
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© NXP B.V. 2010. All rights reserved.
Objective data sheet
Rev....
