BUW14 Datasheet | NXP Semiconductors

DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Fall time CONDITIONS VBE = 0 V TYP. 0.4 MAX. 1000 450 0.5 1 20 UNIT V V A A W µs Tmb ≤ 60 ˚C PINNING - SOT82 PIN 1 2 3 DESCRIPTION emitter collector base PIN CONFIGURATION SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 0.5 1 0.2 0.3 0.3 20 150 150 UNIT V V A A A A A W ˚C ˚C Tmb ≤ 60 ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 100 MAX. 4.5 UNIT K/W K/W 1 Turn-off current. March 1992 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsust VCEsat VCEsat VBEsat h FE h FE PARAMETER Collector cut-off current CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 5 V; IC = 0 A IB = 0 A; IC = 100 m A; L = 25 m H IC = 0.1 A; IB = 10 m A IC = 0.2 A; IB = 20 m A IC = 0.2 A; IB = 20 m A IC = 50 m A; VCE = 5 V IC = 300 m A; VCE = 5 V MIN. 450 25 TYP. 50 50 MAX. 100 1.0 1.0 0.8 1.0 1.0 100 UNIT µA m A m A V V V V Emitter cut-off current Collector-emitter sustaining...