BYD31K Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - Available in ammo-pack. k a BYD31 series and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. DESCRIPTION Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed MAM196 Fig.1 Simplified outline (SOD91) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD31D BYD31G BYD31J BYD31K BYD31M VR continuous reverse voltage BYD31D BYD31G BYD31J BYD31K BYD31M IF(AV) average forward current Ttp = 55 °C; lead length = 10 mm; see Fig.2; averaged over any 20 ms period; see also Fig.6 Tamb = 60 °C; PCB mounting (see Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6 IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 55 °C; see Fig.4 Tamb = 60 °C; see Fig.5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax - - - - - - 200 400 600 800 1000 440 V V V V V m A PARAMETER repetitive peak reverse voltage - - - - - 200 400 600 800 1000 V V V V V CONDITIONS MIN. MAX. UNIT - 320 m A - - - 4 3 5 1996 Sep 18 Not remended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL PRSM PARAMETER non-repetitive peak reverse power dissipation BYD31D to J BYD31K and M Tstg Tj storage temperature junction temperature see Fig.7 CONDITIONS t = 20 µs half sine wave; Tj = Tj max prior to surge - - - 65 - 65 BYD31 series MIN. MAX. UNIT 100 50 +175 +175 W W °C...