BYG50J Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - UL 94V-O classified plastic package - Shipped in 12 mm embossed tape. Top view Side view handbook, 4 columns BYG50 series The well-defined void-free case is of a transfer-moulded thermo-setting plastic. DESCRIPTION DO-214AC; SOD106 surface mountable package with glass passivated chip. cathode band k a MSA474 Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYG50D BYG50G BYG50J BYG50K BYG50M VR continuous reverse voltage BYG50D BYG50G BYG50J BYG50K BYG50M IF(AV) average forward current averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax - - - - - - - 200 400 600 800 1000 2.1 1.0 V V V V V A A PARAMETER repetitive peak reverse voltage - - - - - 200 400 600 800 1000 V V V V V CONDITIONS MIN. MAX. UNIT - 0.7 - 30 1996 May 24 Philips Semiconductors Preliminary specification Controlled avalanche rectifiers BYG50 series SYMBOL ERSM PARAMETER non-repetitive peak reverse avalanche energy BYG50D to J BYG50K and M CONDITIONS L = 120 m H; Tj = Tj max prior to surge; inductive load switched off MIN. MAX. UNIT - -...