NXP Semiconductors ED1802
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● Low current (max. 500 mA)● Low voltage (max. 25 V).
APPLICATIONS
● General purpose switching and amplification.DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package. NPN complement: ED1702. 1 handbook, halfpage ED1802 PINNING PIN 1 2 3 emitter base collectorDESCRIPTION
2 3 3 2 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −30 −25 −5 −500 −1 −200 625 +150 150 +150 V V V mA A mA mW °C °C °C UNIT 1999 Apr 27 2 Philips Semiconductors Product specification PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.