ED1802 Datasheet | NXP Semiconductors

FEATURES - Low current (max. 500 m A) - Low voltage (max. 25 V). APPLICATIONS - General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN plement: ED1702. 1 handbook, halfpage PINNING PIN 1 2 3 emitter base collector DESCRIPTION 2 3 3 2 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. - 30 - 25 - 5 - 500 - 1 - 200 625 +150 150 +150 V V V m A A m A m W °C °C °C UNIT 1999 Apr 27 Philips Semiconductors Product specification PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE h FE PARAMETER collector cut-off current emitter cut-off current DC current gain DC current gain ED1802K ED1802L ED1802M ED1802N ED1802P VCEsat Cc f T Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-emitter saturation voltage IC = - 500 m A; IB = - 50 m A; note 1 collector capacitance transition frequency IE = ie = 0; VCB = - 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = - 20 V IE = 0; VCB = - 20 V; Tj = 150 °C IC = 0; VEB = - 5 V IC = - 500 m A; VCE = - 1 V IC = - 100 m A; VCE = - 1 V IC...