Overview: Freescale Semiconductor Technical Data Document Number: MMRF1312H Rev. 0, 3/2016 RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These RF power devices are designed for pulse applications operating at frequencies from 900 to 1215 MHz. The devices are suitable for use in pulse applications with large duty cycles and long pulses and are ideal for use in high power military and mercial L--Band radar applications such as IFF and DME/TACAN. Typical Short Pulse Performance: In 900–1215 MHz reference circuit,
VDD = 52 Vdc, IDQ(A+B) = 100 mA Frequency (MHz) Signal Type Pout Gps D (W) (dB) (%) 900 Pulse 1615 Peak 15.2 54.0 (128 sec, 10% Duty Cycle) 960 1560 Peak 17.3 55.7 1030 1500 Peak 17.8 53.8 1090 1530 Peak 18.0 54.5 1215 1200 Peak 19.2 58.5 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR 1030 (1) Pulse > 20:1 at all (128 sec, 10% Phase Angles Duty Cycle) Pin (W)
20.2 Peak (3 dB
Overdrive) Test Voltage
52 Result
No Device Degradation 1. Measured in 1030 MHz narrowband reference circuit.
