Datasheet4U Logo Datasheet4U.com

MMRF1312HS - RF Power LDMOS Transistors

Download the MMRF1312HS datasheet PDF. This datasheet also covers the MMRF1312H variant, as both devices belong to the same rf power ldmos transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Internally input and output matched for broadband operation and ease of use.
  • Device can be used in a single--ended, push--pull or quadrature configuration.
  • Qualified up to a maximum of 52 VDD operation.
  • High ruggedness, handles > 20:1 VSWR.
  • Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing.
  • Characterized with series equivalent large--signal impedance parameters Typical.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MMRF1312H-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MMR901XA Pressure Sensor MITSUMI
MMR902 Digital Output Gage Pressure Sensor MITSUMI
MMR931XA Pressure Sensor MITSUMI

Other Datasheets by NXP Semiconductors

Part Number Description
MMRF1312H RF Power LDMOS Transistors
MMRF1312GS RF Power LDMOS Transistors
MMRF1022HS RF Power LDMOS Transistor
MMRF5017HS RF Power GaN Transistor
MMRF5018HS RF Power GaN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MMRF1312H Rev. 0, 3/2016 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These RF power devices are designed for pulse applications operating at frequencies from 900 to 1215 MHz. The devices are suitable for use in pulse applications with large duty cycles and long pulses and are ideal for use in high power military and commercial L--Band radar applications such as IFF and DME/TACAN. Typical Short Pulse Performance: In 900–1215 MHz reference circuit, VDD = 52 Vdc, IDQ(A+B) = 100 mA Frequency (MHz) Signal Type Pout Gps D (W) (dB) (%) 900 Pulse 1615 Peak 15.2 54.0 (128 sec, 10% Duty Cycle) 960 1560 Peak 17.3 55.7 1030 1500 Peak 17.8 53.8 1090 1530 Peak 18.0 54.