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MRF6V12500H - RF Power LDMOS Transistors

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified up to a Maximum of 50 VDD Operation.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation Document Number: MRF6V12500H Rev. 5, 7/2016 MRF6V12500H MRF6V12500HS MRF6V12500GS 960--1215 MHz, 500 W, 50 V PULSE RF POWER LDMOS.

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Other Datasheets by NXP Semiconductors

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MRF6V12500HS RF Power LDMOS Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. These devices are suitable for use in pulse applications, including Mode S ELM.  Typical Pulse Performance: VDD = 50 Volts, IDQ = 200 mA Application Signal Type Pout (1) (W) Freq. (MHz) Gps D (dB) (%) Narrowband Pulse 500 Peak Short Pulse (128 sec, 10% Duty Cycle) 1030 19.7 62.0 Narrowband Mode S ELM Pulse (48  (32 sec on, 18 sec off), Period 2.4 msec, 6.4% Long--term Duty Cycle) 500 Peak 1030 19.7 62.0 Broadband Pulse 500 Peak 960--1215 18.5 57.