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MRF6V12500HS - RF Power LDMOS Transistors

Download the MRF6V12500HS datasheet PDF. This datasheet also covers the MRF6V12500H variant, as both devices belong to the same rf power ldmos transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified up to a Maximum of 50 VDD Operation.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation Document Number: MRF6V12500H Rev. 5, 7/2016 MRF6V12500H MRF6V12500HS MRF6V12500GS 960--1215 MHz, 500 W, 50 V PULSE RF POWER LDMOS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6V12500H-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF6V12500HSR3 RF Power Field Effect Transistors Freescale Semiconductor
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MRF6V10250HSR3 RF Power Field Effect Transistor Freescale Semiconductor
MRF6V13250HR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF6V13250HSR3 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by NXP Semiconductors

Part Number Description
MRF6V12500H RF Power LDMOS Transistors
MRF6V12500GS RF Power LDMOS Transistors
MRF6V14300HR3 RF Power Field Effect Transistors
MRF6V14300HSR3 RF Power Field Effect Transistors
MRF6V2010GN RF Power FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. These devices are suitable for use in pulse applications, including Mode S ELM.  Typical Pulse Performance: VDD = 50 Volts, IDQ = 200 mA Application Signal Type Pout (1) (W) Freq. (MHz) Gps D (dB) (%) Narrowband Pulse 500 Peak Short Pulse (128 sec, 10% Duty Cycle) 1030 19.7 62.0 Narrowband Mode S ELM Pulse (48  (32 sec on, 18 sec off), Period 2.4 msec, 6.4% Long--term Duty Cycle) 500 Peak 1030 19.7 62.0 Broadband Pulse 500 Peak 960--1215 18.5 57.