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PBSS4240DPN - 40V low VCEsat NPN/PNP transistor

General Description

NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) plastic package.

MAX.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • High efficiency leading to reduced heat generation.
  • Reduced printed-circuit board area requirements.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product specification 2003 Feb 20 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • High efficiency leading to reduced heat generation • Reduced printed-circuit board area requirements. APPLICATIONS • Power management: – Complementary MOSFET driver – Dual supply line switching. • Peripheral driver: – Half and full bridge motor drivers – Multi-phase stepper motor driver. DESCRIPTION NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) plastic package.