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PBSS4240T - transistor

General Description

NPN low VCEsat transistor in a SOT23 plastic package.

PNP complement: PBSS5240T.

1.

= p: Made in Hong Kong.

= t: Made in Malaysia.

= W: Made in China.

Key Features

  • Low collector-emitter saturation voltage.
  • High current capability.
  • Improved device reliability due to reduced heat generation.
  • Replacement for SOT89/SOT223 standard packaged transistors.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2001 Jul 13 2004 Jan 09 NXP Semiconductors 40 V; 2 A NPN low VCEsat (BISS) transistor Product data sheet PBSS4240T FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5240T. MARKING TYPE NUMBER PBSS4240T MARKING CODE(1) ZE* Note 1.