PBSS4240V Description
NPN transistor providing low VCEsat and high current capability in a SOT666 plastic package. 2003 Jan 30 2 NXP Semiconductors 40 V low VCEsat NPN transistor Product data sheet PBSS4240V LIMITING VALUES In accordance with the Rating System (IEC 60134). SYMBOL PARAMETER VCBO VCEO VEBO IC ICRP ICM IB IBM Ptot collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) repetitive peak...
PBSS4240V Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency leading to reduced heat generation
- Reduced printed-circuit board area requirements