Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS4240V 40 V low VCEsat NPN transistor
Product data sheet
2003 Jan 30
NXP Semiconductors
40 V low VCEsat NPN transistor
Product data sheet
Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency leading to reduced heat generation
- Reduced printed-circuit board area requirements.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO IC ICRP RCEsat collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance
MAX. UNIT 40 V 2A 2A <190 mΩ
APPLICATIONS
- Power management:
- DC-DC converter
-...
