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PBSS4240V - NPN transistor

General Description

NPN transistor providing low VCEsat and high current capability in a SOT666 plastic package.

PNP complement: PBSS5240V.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High efficiency leading to reduced heat generation.
  • Reduced printed-circuit board area requirements. QUICK.

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Other Datasheets by NXP Semiconductors

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4240V 40 V low VCEsat NPN transistor Product data sheet 2003 Jan 30 NXP Semiconductors 40 V low VCEsat NPN transistor Product data sheet PBSS4240V FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High efficiency leading to reduced heat generation • Reduced printed-circuit board area requirements. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICRP RCEsat collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. UNIT 40 V 2A 2A <190 mΩ APPLICATIONS • Power management: – DC-DC converter – Supply line switching – Battery charger – LCD back lighting.