Part PBSS5230QA
Description PNP low VCEsat (BISS) transistor
Category Transistor
Manufacturer NXP Semiconductors
Size 262.85 KB
NXP Semiconductors
PBSS5230QA

Overview

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4230QA.

  • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified