PBSS5230T Description
PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. MARKING TYPE NUMBER PBSS5230T Note 1. MARKING CODE(1) 3K 1 Top view handbook, halfpage PBSS5230T QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.
PBSS5230T Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- Higher efficiency leading to less heat generation
- Reduced printed-circuit board requirements
- Cost effective alternative to MOSFETs in specific