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PBSS5230T - PNP Transistor

General Description

PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters.

MARKING TYPE NUMBER PBSS5230T Note 1.

= p: Made in Hong Kong.

= t: Made in Malaysia.

= W: Made in China.

1 Top view handbook, halfpage PBSS5230T QUICK REFERENCE

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • Higher efficiency leading to less heat generation.
  • Reduced printed-circuit board requirements.
  • Cost effective alternative to MOSFETs in specific.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5230T 30 V, 2 A PNP low VCEsat (BISS) transistor Product specification 2003 Dec 18 Philips Semiconductors Product specification 30 V, 2 A PNP low VCEsat (BISS) transistor FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements • Cost effective alternative to MOSFETs in specific applications. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs) – Inductive load driver (e.g. relays, buzzers and motors).