Part PBSS5230T
Description PNP Transistor
Category Transistor
Manufacturer NXP Semiconductors
Size 197.30 KB
NXP Semiconductors
PBSS5230T

Overview

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability: IC and ICM
  • Higher efficiency leading to less heat generation
  • Reduced printed-circuit board requirements
  • Cost effective alternative to MOSFETs in specific applications. APPLICATIONS
  • Power management - DC/DC converters - Supply line switching - Battery charger - LCD backlighting.
  • Peripheral drivers - Driver in low supply voltage applications (e.g. lamps and LEDs) - Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. MARKING TYPE NUMBER PBSS5230T Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. MARKING CODE(1) 3K* 1 Top view handbook, halfpage