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PBSS5630PA - 6 A PNP low VCEsat (BISS) transistor

Datasheet Summary

Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

NPN complement: PBSS4630PA.

Features

  • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.3.

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Datasheet Details

Part number PBSS5630PA
Manufacturer NXP
File Size 386.77 KB
Description 6 A PNP low VCEsat (BISS) transistor
Datasheet download datasheet PBSS5630PA Datasheet
Additional preview pages of the PBSS5630PA datasheet.

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www.DataSheet4U.com PBSS5630PA 30 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 — 19 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4630PA. 1.2 Features and benefits      Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.
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