PBSS8110S - NPN low VCEsat (BISS) transistor

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NXP

PBSS8110S NPN low VCEsat (BISS) transistor by NXP - Datasheet Preview — Datasheet preview – PBSS8110S

Datasheet Details

Part number	PBSS8110S
Manufacturer	NXP
File Size	80.09 KB
Description	NPN low VCEsat (BISS) transistor
Datasheet	PBSS8110S Datasheet
Additional preview pages of the PBSS8110S datasheet.

Product details

Description

NPN low VCEsat BISS transistor in a SOT54 plastic package. DESCRIPTION MARKING CODE S8110S 1 handbook, halfpage 2 3 PBSS8110S QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base collector emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.100 1 3 200 UNIT V A A mΩ 2 1 3 MAM259 Fig.1 Simplified outlin

Features

SOT54 package.
Low collector-emitter saturation voltage VCEsat.
High collector current capability: IC and ICM.
Higher efficiency leading to less heat generation.

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Published: Nov 17, 2006 |