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PBSS8110S - NPN low VCEsat (BISS) transistor

General Description

NPN low VCEsat BISS transistor in a SOT54 plastic package.

MARKING TYPE NUMBER PBSS8110S ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS8110S − DESCRIPTION MARKING CODE S8110S 1 handbook, halfpage 2 3 PBSS8110S QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base collector emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.

100 1 3 200 UNIT V A A mΩ 2 1 3 MAM259 Fig.1 Simplified outline (SOT54) and symbol.

Overview

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PBSS8110S 100 V, 1 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Nov 11 2004 Aug 13 Philips Semiconductors.

Key Features

  • SOT54 package.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • Higher efficiency leading to less heat generation.