PBSS8110Z
PBSS8110Z is 1A NPN transistor manufactured by NXP Semiconductors.
description
NPN low VCEsat transistor in a plastic SOT223 (SC-73) package.
1.2 Features s s s s SOT223 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation.
1.3 Applications s Major application segments: x Automotive 42 V power x Tele infrastructure x Industrial. s DC-to-DC converter s Peripheral driver x Driver in low supply voltage applications (e.g. lamps and LEDs) x Inductive load drivers (e.g. relays, buzzers and motors).
1.4 Quick reference data
Table 1: Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance Conditions Min Typ Max 100 1 3 200 Unit V A A mΩ
Philips Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2: Pin 1 2, 4 3 Discrete pinning Description base collector emitter
Simplified outline
Symbol
2, 4 1 3 sym016
Top view
3. Ordering information
Table 3: Ordering information Package Name PBSS8110Z Description plastic surface mounted package; collector pad for good heat transfer; 4 leads Version SOT223 Type number
4. Marking
Table 4: Marking Marking code [1] PB8110 Type number PBSS8110Z
[1] Made in Hong Kong.
9397 750 12568
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01
- 26 April 2004
2 of 12
Philips Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO ICM IC IB Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage peak collector current collector current (DC) base current (DC) total power dissipation Tamb ≤ 25 °C
[1] [2] [3]
Conditions open emitter open base open collector Tj(max)
Min
- 65
- 65
Max 120 100 5 3 1 0.3 650 1000 1.4 150 +150 +150
Unit V V V A A A m...
