Part PBSS8110T
Description NPN low VCEsat (BISS) transistor
Category Transistor
Manufacturer NXP Semiconductors
Size 158.70 KB
NXP Semiconductors
PBSS8110T

Overview

  • SOT23 package
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability: IC and ICM
  • Higher efficiency leading to less heat generation
  • Reduced printed-circuit board requirements. APPLICATIONS
  • Major application segments - Automotive 42 V power - Telecom infrastructure - Industrial
  • Power management - DC/DC converters - Supply line switching - Battery charger - LCD backlighting.
  • Peripheral drivers - Driver in low supply voltage applications (e.g. lamps and LEDs). - Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS9110T. MARKING TYPE NUMBER PBSS8110T Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. ORDERING INFORMATION TYPE NUMBER PBSS8110T PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) *U8 Top view handbook, halfpage