PDTC114TE Description
NPN resistor-equipped transistor in an SC-75; QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor Tamb ≤ 25 °C IC = 1 mA; VCE = 5 V CONDITIONS open base − − − − 200 7 MIN.
PDTC114TE Key Features
- Built-in bias resistor R1 (typ. 10 kΩ)
- Simplification of circuit design
- Reduces number of ponents and board space
PDTC114TE Applications
- Especially suitable for space reduction in interface and driver circuits