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PDTC114TE - NPN resistor-equipped transistor

General Description

NPN resistor-equipped transistor in an SC-75; SOT416 plastic package.

PNP complement: PDTA114TE.

Equivalent inverter symbol.

Key Features

  • Built-in bias resistor R1 (typ. 10 kΩ).
  • Simplification of circuit design.
  • Reduces number of components and board space.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114TE NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES • Built-in bias resistor R1 (typ. 10 kΩ) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of an external resistor. 1 Top view 2 handbook, 4 columns PDTC114TE 3 3 R1 1 2 MAM347 Fig.1 Simplified outline (SC-75; SOT416) and symbol. DESCRIPTION NPN resistor-equipped transistor in an SC-75; SOT416 plastic package. PNP complement: PDTA114TE.