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PDTC114TT - NPN resistor-equipped transistor

General Description

NPN resistor-equipped transistor in a SOT23 plastic package.

PNP complement: PDTA114TT.

MARKING TYPE NUMBER PDTC114TT Note 1.

Key Features

  • Built-in bias resistor R1 (typ. 10 kΩ).
  • Simplification of circuit design.
  • Reduces number of components and board space.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC114TT NPN resistor-equipped transistor Objective specification Supersedes data of 1998 May 19 1999 Apr 16 Philips Semiconductors Objective specification NPN resistor-equipped transistor FEATURES • Built-in bias resistor R1 (typ. 10 kΩ) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of an external resistor. handbook, 4 columns PDTC114TT 3 3 R1 1 2 1 2 MAM360 Top view Fig.1 Simplified outline (SOT23) and symbol. DESCRIPTION NPN resistor-equipped transistor in a SOT23 plastic package. PNP complement: PDTA114TT. 1 3 2 MARKING TYPE NUMBER PDTC114TT Note 1.