PDTC114TT Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC114TT NPN resistor-equipped transistor Objective specification Supersedes data of 1998 May 19 1999 Apr 16 Philips Semiconductors Objective specification NPN resistor-equipped transistor Features - Built-in bias resistor R1 (typ. 10 kΩ) - Simplification of circuit design - Reduces number of ponents and board space. APPLICATIONS - Especially suitable for space reduction in interface and driver circuits - Inverter circuit configurations without use of an external resistor. handbook, 4 columns 3 3 R1 1 2 1 2 MAM360 Top view Fig.1 Simplified outline (SOT23) and symbol. DESCRIPTION NPN resistor-equipped transistor...