PDTC114EEF Datasheet (PDF) Download
NXP Semiconductors
PDTC114EEF

Overview

  • Power dissipation comparable to SOT23
  • Built-in bias resistors R1 and R2 (typ. 10 kΩ each)
  • Simplification of circuit design
  • Reduces number of components and board space. APPLICATIONS
  • Especially suitable for space reduction in interface and driver circuits
  • Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. PNP complement: PDTA114EEF. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output 1 2