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PDTC114EEF - NPN resistor-equipped transistor

General Description

NPN resistor-equipped transistor encapsulated in an ultra small plastic SMD SC-89 (SOT490) package.

PNP complement: PDTA114EEF.

Key Features

  • Power dissipation comparable to SOT23.
  • Built-in bias resistors R1 and R2 (typ. 10 kΩ each).
  • Simplification of circuit design.
  • Reduces number of components and board space.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor Product specification Supersedes data of 1998 Nov 11 1999 May 31 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES • Power dissipation comparable to SOT23 • Built-in bias resistors R1 and R2 (typ. 10 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. PNP complement: PDTA114EEF.