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PDTC114ES

PDTC114ES is NPN resistor-equipped transistor manufactured by NXP Semiconductors.
PDTC114ES datasheet preview

PDTC114ES Datasheet

Part number PDTC114ES
Download PDTC114ES Datasheet (PDF)
File Size 67.06 KB
Manufacturer NXP Semiconductors
Description NPN resistor-equipped transistor
PDTC114ES page 2 PDTC114ES page 3

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PDTC114ES Description

NPN resistor-equipped transistor in a TO-92; PINNING PIN 1 2 3 DESCRIPTION base/input collector/output emitter/ground Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 -----R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = 5 mA;.

PDTC114ES Key Features

  • Built-in bias resistors R1 and R2 (typ. 10 kΩ each)
  • Simplification of circuit design
  • Reduces number of ponents and board space

PDTC114ES Applications

  • Especially suitable for space reduction in interface and driver circuits

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