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PDTC114ES - NPN resistor-equipped transistor

General Description

NPN resistor-equipped transistor in a TO-92; SOT54 plastic package.

PNP complement: PDTA114ES.

Fig.1 Simplified outline (TO-92; SOT54) and symbol.

Key Features

  • Built-in bias resistors R1 and R2 (typ. 10 kΩ each).
  • Simplification of circuit design.
  • Reduces number of components and board space.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114ES NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 18 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 10 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in a TO-92; SOT54 plastic package. PNP complement: PDTA114ES. 1 2 3 MGL136 MAM364 PDTC114ES handbook, halfpage 2 R1 1 R2 3 1 2 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol.