NXP Semiconductors PDTC114ES
NPN resistor-equipped transistor
| Part No. | PDTC114ES |
|---|---|
| Datasheet | PDTC114ES Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN resistor-equipped transistor |
| Buy | Stock & Price |
FEATURES
● Built-in bias resistors R1 and R2 (typ. 10 kΩ each)● Simplification of circuit design
● Reduces number of components and board space.
APPLICATIONS
● Especially suitable for space reduction in interface and driver circuits● Inverter circuit configurations without use of external resistors.
DESCRIPTION
NPN resistor-equipped transistor in a TO-92; SOT54 plastic package. PNP complement: PDTA114ES. 1 2 3 MGL136 MAM364 PDTC114ES handbook, halfpage 2 R1 1 R2 3 1 2 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. PINNING PIN 1 2 3DESCRIPTION
base/input collector/output emitter/ground Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 -----R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = 5 mA; VCE = 5 V CONDITIONS open base − − − − 30 7 0.8 MIN. − − − − − 10 1 TYP. MAX. 50 100 100 500 − 13 1.2 kΩ UNIT V mA mA mW 1998 No...
