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PDTC114YE - NPN resistor-equipped transistor

General Description

DESCRIPTION NPN resistor-equipped transistor in a SC-75 (SOT416) plastic package.

Simplified outline (SC-75; SOT416) and symbol.

Fig.2 Equivalent inverter symbol.

Key Features

  • Built-in bias resistors R1 and R2 (typ. 10 kΩ and 47 kΩ respectively).
  • Simplification of circuit design.
  • Reduces number of components and board space.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 10 kΩ and 47 kΩ respectively) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. 1 2 handbook, halfpage PDTC114YE PINNING PIN 1 2 3 base/input emitter/ground collector/output DESCRIPTION 3 R1 1 R2 3 2 MAM346 DESCRIPTION NPN resistor-equipped transistor in a SC-75 (SOT416) plastic package.