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PHB145NQ06T - N-Channel MOSFET

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Key Features

  • s Standard level threshold s Low on-state resistance. 1.3.

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www.DataSheet4U.com PHB145NQ06T N-channel TrenchMOS™ standard level FET Rev. 01 — 06 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Standard level threshold s Low on-state resistance. 1.3 Applications s Motors, lamps, solenoids s DC-to-DC converters s Uninterruptible power supplies s General industrial applications. 1.4 Quick reference data s VDS ≤ 55 V s Ptot ≤ 250 W s ID ≤ 75 A s RDSon ≤ 6 mΩ. 2.