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PHB14NQ20T - TrenchMOS transistor

General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

Key Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching.
  • High thermal cycling performance.
  • Low thermal resistance SYMBOL d QUICK.

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Philips Semiconductors Product specification TrenchMOS™ transistor PHP14NQ20T, PHB14NQ20T FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 14 A g RDS(ON) ≤ 230 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP14NQ20T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB14NQ20T is supplied in the SOT404 (D2PAK) surface mounting package.