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PHB160N03T - N-channel enhancement mode field-effect transistor

Datasheet Summary

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability: PHB160N03T in SOT404 (D2-PAK).

2.

Features

  • s TrenchMOS™ technology s Very low on-state resistance. 3.

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Datasheet Details

Part number PHB160N03T
Manufacturer NXP
File Size 271.60 KB
Description N-channel enhancement mode field-effect transistor
Datasheet download datasheet PHB160N03T Datasheet
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Full PDF Text Transcription

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PHB160N03T N-channel enhancement mode field-effect transistor Rev. 01 — 13 September 2000 M3D166 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHB160N03T in SOT404 (D2-PAK). 2. Features s TrenchMOS™ technology s Very low on-state resistance. 3. Applications s DC to DC converters s Switched-mode power supplies s General purpose switch. c 4. Pinning information c Table 1: Pin 1 2 3 mb Pinning - SOT404 (D2-PAK), simplified outline and symbol Description gate (g) drain (d) source (s) connected to drain (d) g s [1] Simplified outline mb Symbol d 2 1 3 MBK116 MBB076 SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 package. 1.
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