Datasheet4U Logo Datasheet4U.com

PHB160N03T - N-channel enhancement mode field-effect transistor

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability: PHB160N03T in SOT404 (D2-PAK).

2.

Key Features

  • s TrenchMOS™ technology s Very low on-state resistance. 3.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PHB160N03T N-channel enhancement mode field-effect transistor Rev. 01 — 13 September 2000 M3D166 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHB160N03T in SOT404 (D2-PAK). 2. Features s TrenchMOS™ technology s Very low on-state resistance. 3. Applications s DC to DC converters s Switched-mode power supplies s General purpose switch. c 4. Pinning information c Table 1: Pin 1 2 3 mb Pinning - SOT404 (D2-PAK), simplified outline and symbol Description gate (g) drain (d) source (s) connected to drain (d) g s [1] Simplified outline mb Symbol d 2 1 3 MBK116 MBB076 SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 package. 1.