Datasheet4U Logo Datasheet4U.com

PHB60N06LT - Transistor

General Description

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

Key Features

  • ’Trench’ technology.
  • Very low on-state resistance.
  • Fast switching.
  • Stable off-state characteristics.
  • High thermal cycling performance.
  • Low thermal resistance PHP60N06LT, PHB60N06LT SYMBOL d QUICK.

📥 Download Datasheet

Other Datasheets by NXP Semiconductors

Part Number Description
PHB60N06T Transistor
PHB63NQ03LT logic level FET
PHB65N06LT Transistor
PHB65N06T Transistor
PHB66NQ03LT N-Channel Transistor
PHB69N03LT N-Channel MOSFET
PHB69N03T Transistor
PHB6N50E Transistor
PHB6N60E Transistor
PHB6ND50E Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP60N06LT, PHB60N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 58 A g s RDS(ON) ≤ 20 mΩ (VGS = 5 V) RDS(ON) ≤ 18 mΩ (VGS = 10 V) GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP60N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.