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PHB65N06LT - Transistor

Datasheet Summary

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.

Features

  • very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching.

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Datasheet Details

Part number PHB65N06LT
Manufacturer NXP
File Size 69.59 KB
Description Transistor
Datasheet download datasheet PHB65N06LT Datasheet
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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHB65N06LT QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX.
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