PHB6N50E - Transistor

Datasheet Summary

Description

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V.

and computer monitor power supplies, d.c.

to d.c.

Features

Repetitive Avalanche Rated.
Fast switching.
Stable off-state characteristics.
High thermal cycling performance.
Low thermal resistance PHP6N50E, PHB6N50E SYMBOL d QUICK.

NXP

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Datasheet Details

Part number	PHB6N50E
Manufacturer	NXP
File Size	77.79 KB
Description	Transistor
Datasheet	PHB6N50E Datasheet
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Full PDF Text Transcription

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP6N50E, PHB6N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 5.9 A RDS(ON) ≤ 1.5 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP6N50E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB6N50E is supplied in the SOT404 surface mounting package.

Published: Mar 22, 2005 |