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PHB6ND50E - Transistor

General Description

N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).

This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits.

Key Features

  • Repetitive Avalanche Rated.
  • Fast switching.
  • Stable off-state characteristics.
  • High thermal cycling performance.
  • Low thermal resistance.
  • Fast reverse recovery diode PHP6ND50E, PHB6ND50E SYMBOL d QUICK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Fast reverse recovery diode PHP6ND50E, PHB6ND50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 5.9 A g RDS(ON) ≤ 1.5 Ω s trr = 180 ns GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits. The PHP6ND50E is supplied in the SOT78 (TO220AB) conventional leaded package.