PHB6ND50E Datasheet | NXP Semiconductors

FEATURES - Repetitive Avalanche Rated - Fast switching - Stable off-state characteristics - High thermal cycling performance - Low thermal resistance - Fast reverse recovery diode PHP6ND50E, PHB6ND50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 5.9 A g RDS(ON) ≤ 1.5 Ω s trr = 180 ns GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits. The PHP6ND50E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB6ND50E is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab gate drain 1 source DESCRIPTION SOT78 (TO220AB) tab SOT404 tab 2 drain 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 500 500 ± 30 5.9 3.7 24 125 150 UNIT V V V A A A W ˚C August 1998 Rev 1.100 Philips Semiconductors Product specification Power MOS transistors FREDFET, Avalanche energy rated AVALANCHE ENERGY LIMITING VALUES PHP6ND50E, PHB6ND50E Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy CONDITIONS MIN. MAX. 280 UNIT m J Unclamped inductive load, IAS = 4 A; tp = 0.17 ms; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer to fig:17 Repetitive avalanche energy1 IAR = 5.9 A; tp = 1 µs; Tj prior to avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V; refer to fig:18 Repetitive and...