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PHB6ND50E - Transistor

Datasheet Summary

Description

N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).

This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits.

Features

  • Repetitive Avalanche Rated.
  • Fast switching.
  • Stable off-state characteristics.
  • High thermal cycling performance.
  • Low thermal resistance.
  • Fast reverse recovery diode PHP6ND50E, PHB6ND50E SYMBOL d QUICK.

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Datasheet Details

Part number PHB6ND50E
Manufacturer NXP
File Size 64.40 KB
Description Transistor
Datasheet download datasheet PHB6ND50E Datasheet
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Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Fast reverse recovery diode PHP6ND50E, PHB6ND50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 5.9 A g RDS(ON) ≤ 1.5 Ω s trr = 180 ns GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits. The PHP6ND50E is supplied in the SOT78 (TO220AB) conventional leaded package.
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