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PHKD3NQ10T - Dual N-channel TrenchMOS standard level FET

Description

Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.

Motor and relay drivers

d.c.

to d.c.

converters The PHKD3NQ10T is supplied in the SOT96-1 (SO8) surface mounting package.

Features

  • Dual device.
  • Low on-state resistance.
  • Fast switching.
  • Low profile surface mount package SYMBOL d1 d2 QUICK.

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Datasheet preview – PHKD3NQ10T

Datasheet Details

Part number PHKD3NQ10T
Manufacturer NXP
File Size 159.19 KB
Description Dual N-channel TrenchMOS standard level FET
Datasheet download datasheet PHKD3NQ10T Datasheet
Additional preview pages of the PHKD3NQ10T datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification Dual N-channel TrenchMOSTM transistor PHKD3NQ10T FEATURES • Dual device • Low on-state resistance • Fast switching • Low profile surface mount package SYMBOL d1 d2 QUICK REFERENCE DATA VDS = 100 V ID = 3 A RDS(ON) ≤ 90 mΩ (VGS = 10 V) s2 g1 s1 g2 GENERAL DESCRIPTION Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:• Motor and relay drivers • d.c. to d.c. converters The PHKD3NQ10T is supplied in the SOT96-1 (SO8) surface mounting package.
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