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PHKD3NQ10T - Dual N-channel TrenchMOS standard level FET

General Description

Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.

Motor and relay drivers

d.c.

to d.c.

converters The PHKD3NQ10T is supplied in the SOT96-1 (SO8) surface mounting package.

Key Features

  • Dual device.
  • Low on-state resistance.
  • Fast switching.
  • Low profile surface mount package SYMBOL d1 d2 QUICK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Philips Semiconductors Product specification Dual N-channel TrenchMOSTM transistor PHKD3NQ10T FEATURES • Dual device • Low on-state resistance • Fast switching • Low profile surface mount package SYMBOL d1 d2 QUICK REFERENCE DATA VDS = 100 V ID = 3 A RDS(ON) ≤ 90 mΩ (VGS = 10 V) s2 g1 s1 g2 GENERAL DESCRIPTION Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:• Motor and relay drivers • d.c. to d.c. converters The PHKD3NQ10T is supplied in the SOT96-1 (SO8) surface mounting package.