PHN1013 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET PHN1013 N-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor Features - Very low on-state resistance. APPLICATIONS - DC to DC converters - General purpose switching applications. PINNING - SOT96-1 (SO8) PIN 1 2 3 4 5 6 7 8 SYMBOL s s s g d d d d DESCRIPTION source source source gate drain drain drain drain 1 Top view 4 MAM358 DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package. handbook,...