PHN1013 Description
source source source gate drain drain drain drain 1 Top view 4 MAM358 PHN1013 DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package. handbook, halfpage 8 5 d g s Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDSon Tj PARAMETER drain-source voltage drain current (DC) total power dissipation...
PHN1013 Key Features
- Very low on-state resistance
PHN1013 Applications
- DC to DC converters