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PHN1013 - N-channel enhancement mode MOS transistor

General Description

DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package.

Key Features

  • Very low on-state resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET PHN1013 N-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor FEATURES • Very low on-state resistance. APPLICATIONS • DC to DC converters • General purpose switching applications. PINNING - SOT96-1 (SO8) PIN 1 2 3 4 5 6 7 8 SYMBOL s s s g d d d d DESCRIPTION source source source gate drain drain drain drain 1 Top view 4 MAM358 PHN1013 DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package. handbook, halfpage 8 5 d g s Fig.1 Simplified outline and symbol.