PMDXB950UPE - dual P-channel Trench MOSFET

Product Overview

NXP

PMDXB950UPE dual P-channel Trench MOSFET by NXP - Datasheet Preview — Datasheet preview – PMDXB950UPE

Datasheet Details

Part number	PMDXB950UPE
Manufacturer	NXP
File Size	274.18 KB
Description	dual P-channel Trench MOSFET
Datasheet	PMDXB950UPE Datasheet
Additional preview pages of the PMDXB950UPE datasheet.

Product details

Description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω 3.

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Published: Nov 11, 2013 |