PMDXB950UPE Datasheet dual P-channel MOSFET

Manufacturer: Nexperia

PMDXB950UPE dual p-channel mosfet by Nexperia - Datasheet Preview

Datasheet Details

Part number	PMDXB950UPE
Manufacturer	Nexperia
File Size	727.39 KB
Description	dual P-channel MOSFET
Download	PMDXB950UPE Download (PDF)

General Description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Overview

PMDXB950UPE 20 V, dual P-channel Trench MOSFET 30 June 2015 Product data sheet 1.

Key Features

Trench MOSFET technology.
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
Exposed drain pad for excellent thermal conduction.
ElectroStatic Discharge (ESD) protection > 1 kV HBM.
Drain-source on-state resistance RDSon = 1.02 Ω 3.

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