PMDXB950UPEL Datasheet dual P-channel MOSFET

Manufacturer: Nexperia

PMDXB950UPEL dual p-channel mosfet by Nexperia - Datasheet Preview

Datasheet Details

Part number	PMDXB950UPEL
Manufacturer	Nexperia
File Size	732.80 KB
Description	dual P-channel MOSFET
Download	PMDXB950UPEL Download (PDF)

General Description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Overview

PMDXB950UPEL 20 V, dual P-channel Trench MOSFET 28 June 2016 Product data sheet 1.

Key Features

Low leakage current.
Trench MOSFET technology.
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
Exposed drain pad for excellent thermal conduction.
ElectroStatic Discharge (ESD) protection > 1 kV HBM.
Drain-source on-state resistance RDSon = 1.02 Ω 3.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	PMDXB950UPE	dual P-channel Trench MOSFET	NXP

More Datasheets from Nexperia

Part Number	Description
PMDXB950UPE	dual P-channel MOSFET
PMDXB1200UPE	dual P-channel MOSFET
PMDXB550UNE	dual N-channel MOSFET
PMDXB600UNE	Dual N-Channel MOSFET
PMDXB600UNEL	dual N-channel MOSFET
PMDPB30XN	dual N-channel MOSFET
PMDPB55XP	Dual P-channel MOSFET
PMDPB56XNEA	dual N-channel MOSFET
PMDPB58UPE	dual P-channel MOSFET
PMDPB70XP	dual P-channel MOSFET