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PMXB360ENEA - N-channel Trench MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Logic-level compatible Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Tin-plated 100 % solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3.

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Brand Logo Part Number Description Manufacturer
nexperia Logo PMXB360ENEA N-Channel MOSFET nexperia

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DF N1 01 PMXB360ENEA 16 September 2013 0D -3 80 V, N-channel Trench MOSFET Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Logic-level compatible Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Tin-plated 100 % solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications • • • • Relay driver Power management in automotive and industrial applications LED driver DC-to-DC converter 4. Quick reference data Table 1.