PMXB360ENEA Datasheet and Specifications PDF

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and be.

and benefits
*
*
*
*
* Logic-level compatible Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Tin-plated 100 % solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications
*
*
*
* Relay driver .

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and be.

and benefits
* Logic-level compatible
* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Tin-plated 100 % solderable side pads for optical solder inspection
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
* AEC-Q101 qualified 3. Applications
* Relay driver
* Powe.