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PUMD10 - NPN/PNP resistor-equipped transistors

General Description

NPN/PNP resistor-equipped transistors in an SC-88 (SOT363) plastic package.

Fig.1 Simplified outline (SC-88) and symbol.

Key Features

  • Transistors with different polarity and built-in bias resistors R1 and R2 (typ. 2.2 kΩ and 47 kΩ respectively).
  • No mutual interference between the transistors.
  • Simplification of circuit design.
  • Reduces number of components and board space. TR1 R2 handbook, halfpage PUMD10 6 5 4 R1 5 4 6 R2 TR2 R1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMD10 NPN/PNP resistor-equipped transistors Product specification Supersedes data of 1998 Dec 04 1999 May 20 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors FEATURES • Transistors with different polarity and built-in bias resistors R1 and R2 (typ. 2.2 kΩ and 47 kΩ respectively) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and board space. TR1 R2 handbook, halfpage PUMD10 6 5 4 R1 5 4 6 R2 TR2 R1 APPLICATIONS • Especially suitable for space reduction in portable equipment • Inverter circuit configurations without use of external resistors.