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PUMD16 - NPN/PNP resistor-equipped transistors

General Description

NPN/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details).

PRODUCT OVERVIEW TYPE NUMBER PUMD16 Note 1.

= p: Made in Hong Kong.

= t: Made in Malaysia.

= W: Made in China.

Key Features

  • Built-in bias resistors.
  • Simplified circuit design.
  • Reduction of component count.
  • Reduced pick and place costs.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMD16 NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ Product specification 2003 Oct 22 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver • Replacement of general purpose transistors in digital applications • Control of IC inputs. DESCRIPTION NPN/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW TYPE NUMBER PUMD16 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China.