PBSS4140DPN Description
TR2 PARAMETER collector-emitter voltage peak collector current peak collector current NPN PNP equivalent on-resistance MAX. 40 1 2 − − <500 UNIT V A A − − mΩ 6 5 4 DESCRIPTION TR2 NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package. 2001 Dec 13 2 Datasheet pdf - http://..net/ .DataSheet.co.kr Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor LIMITING VALUES In...
PBSS4140DPN Key Features
- 600 mW total power dissipation
- Low collector-emitter saturation voltage
- High current capability
- Improved device reliability due to reduced heat generation
- Replaces two SOT23 packaged low VCEsat transistors on same PCB area
- Reduces required PCB area
- Reduced pick and place costs