PBSS4140V Description
NPN low VCEsat transistor with high current capability in a SOT666 plastic package. 2002 Jun 20 2 Datasheet pdf - http://..net/ .DataSheet.co.kr Philips Semiconductors Product specification 40 V low VCEsat NPN transistor LIMITING VALUES In accordance with the Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM ICRP IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage...
PBSS4140V Key Features
- 300 mW total power dissipation
- Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package
- Improved thermal behaviour due to flat leads
- Excellent coplanarity due to straight leads
- Low collector-emitter saturation voltage
- High current capabilities
- Reduced required PCB area