N08T1630CXB Datasheet | NanoAmp Solutions

Overview The N08T1630Cx B is an integrated memory device containing a low power 8 Mbit SRAM built using a self-refresh DRAM array organized as 512,288 words by 16 bits. It is designed to be identical in operation and interface to standard 6T SRAMS. The device is designed for low standby and operating current and includes a power-down feature to automatically enter standby mode. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N08T1630Cx B is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40o C to +85o C and is available in JEDEC standard BGA and TSOP2 packages patible with other standard 512Kb x 16 SRAMs. Features - Single Wide Power Supply Range 2.7 to 3.6 Volts - Very low standby current 70µA at 3.0V (Max) - Very low operating current 2.0m A at 3.0V and 1µs (Typical) - Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion - Very fast access time 55ns address access option 30ns OE access time - Automatic power down to standby mode - TTL patible three-state output driver - Green package option for TSOP and BGA Product Family Part Number N08T1630C2BZ N08T1630C2BZ2 N08T1630C1BT N08T1630C1BT2 Package Type - BGA Green 48 - BGA 44- TSOP2 Green 44- TSOP2 Operating Temperature Power Supply (Vcc) Speed Standby Operating Current (ISB), Current (Icc), Max Max @ 3.0V -40o C to +85o C 2.7V - 3.6V 55/70ns @ 2.7V 70 µA 3 m A @ 1MHz Pin Configuration (Top View) A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A18 A17 A16 A15 A14 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26...