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N08T1630CXB Datasheet 8mb Ultra-low Power Asynchronous CMOS Sram

Manufacturer: NanoAmp Solutions

Datasheet Details

Part number N08T1630CXB
Manufacturer NanoAmp Solutions
File Size 282.80 KB
Description 8Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet N08T1630CXB_NanoAmpSolutions.pdf

N08T1630CXB Overview

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 .nanoamp. N08T1630CxB .. 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit Overview The N08T1630CxB is an integrated memory device containing a low power 8 Mbit SRAM built using a self-refresh DRAM array organized as 512,288 words by 16 bits. It is designed to be identical in operation and interface to standard 6T SRAMS. The...

N08T1630CXB Key Features

  • Single Wide Power Supply Range 2.7 to 3.6 Volts
  • Very low standby current 70µA at 3.0V (Max)
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical)
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for
  • Very fast access time 55ns address access option 30ns OE access time
  • Automatic power down to standby mode
  • TTL patible three-state output driver
  • Green package option for TSOP and BGA
  • BGA Green 48
  • BGA 44- TSOP2 Green 44- TSOP2

N08T1630CXB Applications

  • Single Wide Power Supply Range 2.7 to 3.6 Volts

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N08T1630CXB Distributor