NT5DS16M8AW Overview
The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM. Read or Write mand are used to select the bank and the starting column location for the burst access.
NT5DS16M8AW Key Features
- Values are nominal (exact tCK should be used). CAS Latency
- Double data rate architecture: two data transfers per clock cycle
- Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver
- DQS is edge-aligned with data for reads and is centeraligned with data for writes
- Differential clock inputs (CK and CK)
- Four internal banks for concurrent operation
- Data mask (DM) for write data
- DLL aligns DQ and DQS transitions with CK transitions, also aligns QFC transitions with CK during Read cycles
- mands entered on each positive CK edge; data and data mask referenced to both edges of DQS
- Burst lengths: 2, 4, or 8
