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NT5CC256M8IN - Industrial and Automotive DDR3(L) 2Gb SDRAM

Download the NT5CC256M8IN datasheet PDF. This datasheet also covers the NT5CB256M8IN variant, as both devices belong to the same industrial and automotive ddr3(l) 2gb sdram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • JEDEC DDR3 Compliant - 8n Prefetch Architecture - Differential Clock(CK/) and Data Strobe(DQS/) - Double-data rate on DQs, DQS and DM.
  • Data Integrity - Auto Self Refresh (ASR) by DRAM built-in TS - Auto Refresh and Self Refresh Modes.
  • Power Saving Mode - Partial Array Self Refresh (PASR) 1 - Power Down Mode.
  • Signal Integrity - Configurable DS for system compatibility - Configurable On-Die Termination - ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NT5CB256M8IN-Nanya.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NT5CC256M8IN
Manufacturer Nanya
File Size 3.45 MB
Description Industrial and Automotive DDR3(L) 2Gb SDRAM
Datasheet download datasheet NT5CC256M8IN Datasheet

Full PDF Text Transcription for NT5CC256M8IN (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NT5CC256M8IN. For precise diagrams, tables, and layout, please refer to the original PDF.

NTC Proprietary Level: Property DDR3(L) 2Gb SDRAM NT5CB(C)256M8IN / NT5CB(C)128M16IP Commercial, Industrial and Automotive DDR3(L) 2Gb SDRAM Features  JEDEC DDR3 Complia...

View more extracted text
ustrial and Automotive DDR3(L) 2Gb SDRAM Features  JEDEC DDR3 Compliant - 8n Prefetch Architecture - Differential Clock(CK/) and Data Strobe(DQS/) - Double-data rate on DQs, DQS and DM  Data Integrity - Auto Self Refresh (ASR) by DRAM built-in TS - Auto Refresh and Self Refresh Modes  Power Saving Mode - Partial Array Self Refresh (PASR) 1 - Power Down Mode  Signal Integrity - Configurable DS for system compatibility - Configurable On-Die Termination - ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm ± 1%)  Signal Synchronization - Write Leveling via MR settings 6 - Read Leveling via MPR