Datasheet Summary
2Gb DDR3 SDRAM B-Die
NT5CB512M4BN / NT5CB256M8BN / NT5CB128M16BP NT5CC512M4BN / NT5CC256M8BN / NT5CC128M16BP
Feature
- 1.5V ± 0.075V / 1.35V -0.0675V/+0.1V (JEDEC
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- Write Leveling OCD Calibration Dynamic ODT (Rtt_Nom & Rtt_WR) Auto Self-Refresh Self-Refresh Temperature RoHS pliance and Halogen free Packages: Standard Power Supply)
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- - 8 Internal memory banks (BA0- BA2) Differential clock input (CK, ) Programmable Latency: 6, 7, 8, 9, 10, 11 Programmable Additive Latency: 0, CL-1, CL-2 Programmable Sequential / Interleave Burst Type Programmable Burst Length: 4, 8 8 bit prefetch architecture Output Driver Impedance Control
78-Ball BGA for x4 & x8...