Datasheet Summary
4Gb DDR3 SDRAM B-Die
NT5CB1024M4BN / NT5CB512M8BN / NT5CB256M16BP NT5CC1024M4BN / NT5CC512M8BN / NT5CC256M16BP
Feature
- VDD = VDDQ = 1.5V ± 0.075V (JEDEC Standard Power Supply)
- VDD = VDDQ = 1.35V -0.0675V/+0.1V (Backward patible to VDD = VDDQ = 1.5V ±0.075V) 8 Internal memory banks (BA0- BA2) Differential clock input (CK, ) Programmable Latency: 5, 6, 7, 8, 9, 10, 11 WRITE Latency (CWL): 5,6,7,8,9 POSTED CAS ADDITIVE Programmable Additive Latency (AL): 0, CL-1, CL-2 clock
- - Programmable Sequential / Interleave Burst Type Programmable Burst Length: 4, 8 Through ZQ pin (RZQ:240 ohm±1%)
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- - 8n-bit prefetch architecture Output Driver Impedance Control...