NT5CC512M4GN Overview
Description
The 2Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 2,147,483,648 bits. It is internally configured as an octal-bank DRAM.
Key Features
- VDD = VDDQ = 1.5V ± 0.075V(JEDEC Standard Power Supply)
- VDD = VDDQ = 1.35V -0.0675V/+0.1V (Backward Compatible to VDD = VDDQ = 1.5V ±0.075V)
- 8 Internal memory banks (BA0- BA2)
- Differential clock input (CK, )
- WRITE Latency (CWL): 5,6,7,8,9
- POSTED CAS ADDITIVE Programmable Additive Latency (AL): 0, CL-1, CL-2 clock
- Programmable Sequential / Interleave Burst Type Through ZQ pin (RZQ:240 ohm±1%)
- Programmable Burst Length: 4, 8
- 8n-bit prefetch architecture
- Output Driver Impedance Control
