2N5196 - N-Channel Monolithic Dual JFETs

National Semiconductor (now Texas Instruments)

General Description

match.

(Derate 2.

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2N5196 n-channel monolithic dual jfets by National Semiconductor (now Texas Instruments) - Datasheet Preview

Datasheet Details

Part number	2N5196
Manufacturer	National Semiconductor (now Texas Instruments)
File Size	32.76 KB
Description	N-Channel Monolithic Dual JFETs
Datasheet	2N5196 Datasheet

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Other Datasheets by National Semiconductor (now Texas Instruments)

Part Number	Description
2N5197	N-Channel Monolithic Dual JFETs
2N5198	N-Channel Monolithic Dual JFETs
2N5199	N-Channel Monolithic Dual JFETs
2N5245	N-Channel JFETs
2N5246	N-Channel JFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Process 83 2N51 96-99 N-Channel Monolithic Dual JFETs General Description The 2N5196thru 2N5199 series of N-channel monolithic dual JFETs is designed for low to medium frequency differential amplifiers requiring low leakage and tight match. Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage Gate Current Device Dissipation (Each Side), T/ = 85°C (Derate 2.56 mW/°C) -50V 50 mA 250 mW Total Device Dissipation, Ta = 85°C (Derate 4.3 mW/°C) 500 mW Storage Temperature Range Lead Temperature (1/16" from case for 10 seconds) 65°Cto+200°C a 300 C 0175- 0195 " (4445 -4.9531 0.209 0.230 (5.309 SM2! 0170-0.210 (4.318 5T334) SLATIMG PLANE mnr 016 -0 019 ddq] 0.030 PIN FET (12) 1 SI 2 D1 3 G1 5 S2 6 D2 7 G2 0.028-0.